| 摘要 |
<p>A method of forming a recess gate of a semiconductor device is provided to increase easily the length of a channel region by performing an oxidation process on a bottom portion alone of a gate trench. A gate trench is formed on a semiconductor substrate(31). A nitride layer(41) is formed along an upper surface of the resultant structure. A bottom portion of the gate trench is exposed to the outside by etching selectively the nitride layer using a photolithographic process. An oxide layer(45) is formed on the bottom of the gate trench by using an oxidation process. Then, the nitride layer and the oxide layer are removed therefrom. A stacked structure composed of a gate insulating layer and a gate conductive layer is filled in the gate trench.</p> |
