Method for fabricating dielectric layer in flash memory device,申请号KR20050054977-传众专利搜索

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发明名称	Method for fabricating dielectric layer in flash memory device
摘要
申请公布号	KR100673242(B1)	申请公布日期	2007.01.22
申请号	KR20050054977	申请日期	2005.06.24
申请人		发明人
分类号	H01L21/8247;H01L27/105	主分类号	H01L21/8247
代理机构		代理人
主权项
地址

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