| 摘要 |
<p>A method for manufacturing a flash memory is provided to reduce process time and to improve reliability by forming a control gate, a dielectric film and a floating gate in same etch equipment using mixed gases of Cl2, HBr, HeO2, Ar, CHF3, and CF4. A gate oxide layer(101), a first polysilicon layer(102), an interlayer dielectric(103), and a second polysilicon layer are sequentially formed on a substrate(100). A control gate(114) is formed by etching the second polysilicon layer using a photoresist pattern(106) and mixed gases of Cl2, HBr, HeO2, and CF4. A dielectric film is formed by etching the interlayer dielectric using the photoresist pattern and mixed gases of Ar and CHF3. A floating gate is formed by etching the first polysilicon layer using HBr and HeO2 gas.</p> |
