SUPERLUMINESCENT DIODE AND METHOD OF MANUFACTURING THE SAME

摘要

A super luminescent diode and a method of manufacturing the same are provided to form simultaneously an LD(Laser Diode) electrode and an SOA(Semiconductor Optical Amplifier) electrode by using a single active layer. An InP substrate(10) includes an LD region and a SOA region for amplifying light generated from the laser diode region. A light waveguide of a BRS(Buried Ridge Stripe) structure includes an active layer having a resonant stripe pattern which is extended over the SOA region and the LD region. A first electrode is formed on the active layer of the SOA region. A second electrode is formed on the active layer of the LD region and is insulated from the first electrode. A current shielding region is inserted between the first and second electrodes.