| 摘要 |
A method for extracting an effective channel length and an overlap length in an MOSFET is provided to improve the exactness by using the capacitance between a gate and a bulk substrate. First to third MOSFETs are formed on a substrate(S10). Each parasitic capacitance value between a gate and bulk substrate is extracted from the first to third MOSFETs by using first and second capacitance values between gates of the first and the second MOSFETs and the bulk substrate, wherein the first and the second capacitance values are obtained by applying a first voltage between the gates of the first and the second MOSFETs and the bulk substrate(S14). Each capacitance value between the gates of the first and the third MOSFETs and the bulk substrate is obtained by applying second and third voltages to the resultant structure. The parasitic capacitance value is removed from the capacitance value. An overlap length and a effective channel length are sequentially extracted by using the resultant capacitance value(S18,S20).
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