发明名称 |
SEMICONDUCTOR CIRCUIT USING VERTICAL TRANSISTOR |
摘要 |
<p>A semiconductor circuit is provided to improve the degree of integration and to improve characteristics of the semiconductor circuit itself by using an improved vertical transistor structure. A semiconductor circuit includes an amplifying transistor pair, a load portion, and a current source. The amplifying transistor pair includes two transistors. The amplifying transistor pair is used for amplifying a differential input signal and outputting the amplified differential input signal. The load portion is located at a portion between a first power source and the amplifying transistor pair. The current source is located between the amplifying transistor pair and a second power source. The current source is used as a current path between the first and the second power sources. Each transistor of the amplifying transistor pair includes a drain(341) of an upper portion and a source(343) of a lower portion.</p> |
申请公布号 |
KR100672032(B1) |
申请公布日期 |
2007.01.19 |
申请号 |
KR20050127690 |
申请日期 |
2005.12.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
TAK, NAM KYUN;SONG, KI WHAN |
分类号 |
H01L29/78;H01L29/86 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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