发明名称 SEMICONDUCTOR CIRCUIT USING VERTICAL TRANSISTOR
摘要 <p>A semiconductor circuit is provided to improve the degree of integration and to improve characteristics of the semiconductor circuit itself by using an improved vertical transistor structure. A semiconductor circuit includes an amplifying transistor pair, a load portion, and a current source. The amplifying transistor pair includes two transistors. The amplifying transistor pair is used for amplifying a differential input signal and outputting the amplified differential input signal. The load portion is located at a portion between a first power source and the amplifying transistor pair. The current source is located between the amplifying transistor pair and a second power source. The current source is used as a current path between the first and the second power sources. Each transistor of the amplifying transistor pair includes a drain(341) of an upper portion and a source(343) of a lower portion.</p>
申请公布号 KR100672032(B1) 申请公布日期 2007.01.19
申请号 KR20050127690 申请日期 2005.12.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 TAK, NAM KYUN;SONG, KI WHAN
分类号 H01L29/78;H01L29/86 主分类号 H01L29/78
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