SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a semiconductor device comprising an insulating film (6) formed on a silicon substrate (1), a buried metal interconnect (8) formed in the insulating film (6), and a barrier metal film (7) formed between the insulating film (6) and the metal interconnect (8). The barrier metal film (7) is a metal compound film which is characterized by containing at least one of the elements constituting the insulating film (6). ® KIPO & WIPO 2007