| 摘要 |
<p>A method for forming a resistor of a flash memory device is provided to obtain a stable polysilicon resistor and a stable high voltage by controlling CD(Critical Dimension) in isolation processing. After an isolation layer(202) is formed in a substrate(200), a trench is formed by etching a desired portion of the isolation layer. The trench is filled with a first polysilicon layer(206). A dielectric pattern(208) is formed on the isolation layer, and a second polysilicon layer(212) is formed on the resultant structure. The second polysilicon layer is etched to expose a desired portion of the dielectric pattern, thereby isolating the second and first polysilicon layer. An interlayer dielectric(214) is formed on the resultant structure, and a contact plug(216) is formed in the interlayer dielectric and the second polysilicon layer.</p> |
