发明名称 SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 <p>A solid state image device is provided to eliminate almost all of image noise by using low alpha-ray glass as a light transmitting member. A solid state image device(102) is formed on a first surface of a semiconductor substrate, having a light receiving region. A silicon substrate(101) is attached to the surface of a light transmitting substrate including low alpha-ray glass by an adhesive layer, functioning as a spacer(203S). While a resist pattern is left on a region for the spacer, the silicon substrate is etched to form the spacer. A predetermined depth of the light transmitting substrate is etched to form a groove part between devices. A plurality of light emitting members and a plurality of voids are built in a light transmitting cover member including the spacer and the groove part. The light transmitting member has second and third surfaces wherein the second surface is opposite to the third surface. The light transmitting member and the first surface demarcate voids between the second surface and the outer surface of the light receiving region. The light transmitting cover member is attached to the semiconductor substrate at a temperature of 0~80 deg.C to form a built-in member by a room-temperature hardening or optical-hardening adhesive layer. An external connection terminal is connected to the solid-state image device. The light transmitting member includes low alpha-ray glass. The distance from the outer surface of the light receiving region to the third surface is 0.5~1.5 millimeters.</p>
申请公布号 KR20070009953(A) 申请公布日期 2007.01.19
申请号 KR20060132128 申请日期 2006.12.21
申请人 FUJI FILM CORPORATION 发明人 NISHIDA KAZUHIRO;MAEDA HIROSHI;NEGISHI YOSHIHISA;HOSAKA SHUNICHI;WATANABE EIJI;YASUMATSU MASATOSHI
分类号 H01L27/14;H01L27/146;H01L23/02;H01L27/148;H01L31/02;H01L31/10;H04N5/225;H04N5/335;H04N5/369;H04N5/372 主分类号 H01L27/14
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