| 摘要 |
A CMOS image sensor having shared sensing nodes between adjacent pixels is provided to make a sensing node receive more photo charges generated by an improved fill-factor by sharing a sensing node of a pixel in a non-selected line when a specific pixel in a selected line is operated wherein the pixel in the non-selected line is adjacent to the specific pixel. Unit pixels are arranged as a matrix type in row and column directions to form a pixel array. A photo charge generating unit(PD2) absorbs light from the outside and generates photo charges. A sensing node(SN2) receives photo charges from the photo charge generating unit. A transfer unit transfers the photo charges form the photo charge generating unit to the sensing node. The sensing node is reset by a reset unit(M422). An output unit(M423) outputs an electrical signal corresponding to the sensing node. An addressing unit(M424) performs an addressing process by a switching operation in response to a select signal wherein one side of the addressing unit is connected to the output unit. A switching unit(M400,M450) connects a sensing node of a pixel adjacent to a selected pixel with a sensing node of the selected pixel in response to the select signal so that the storage capacitance of the sensing node of the selected pixel is increased.
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