| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of photoelectric transducer which keeps high conductivity by preventing a film quality deterioration of p-layer by a drawing out effect of hydrogen from a semiconductor layer of dopant while keeping excellent interface property, and suppresses the amount of optical absorption, furthermore has the excellent interface property with respect to both oxide system transparent conductive film and photoelectric transducing layer. <P>SOLUTION: The manufacturing method of the photoelectric transducer is characterized in that the p-layer, consisting of a-Si:H, a-Ge:H or a-SiGe:H which constitutes the photoelectric transducer having pin junction, is formed in such a way that a first p-layer, to which boron p-type dopant is added uniformly, having film thickness of 5 nm or less is deposited inside a depositing chamber, that a second p-layer is deposited on the above-mentioned first p-layer by gas decomposition containing no boron that is the p-type dopant inside the same above-mentioned depositing chamber after depositing the first p-layer, and that a surface of the above-mentioned second p-layer is processed in plasma treatment inside the depositing chamber. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
