| 摘要 |
The present invention disclosed a non-volatile memory device and fabricating method thereof. The structure of non-volatile memory device at least comprises a substrate, several dielectric strips, several bit lines, a dielectrically stacking multi-layer, and several word lines. The substrate has several recesses. The dielectric strips are formed on the substrate, and each of the recess is interposed between two adjacent dielectric strips. The bit lines are respectively formed on the dielectric strips. The dielectrically stacking multi-layer comprising a charge-trapping layer is disposed on the bit lines and the recesses. The word lines are formed on the dielectrically stacking multi-layer and intersecting to the bit lines. When a voltage is applied to the bit lines, a plurality of inversion regions are respectively generated on the substrate.
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