<p>N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single crystal diamond is then formed with a controlled number of N-V centers. The N-V centers form Qubits for use in electronic circuits. Masked and controlled ion implants, coupled with annealing are used in CVD formed diamond to create structures for both optical applications and nanoelectromechanical device formation. Waveguides may be formed optically coupled to the N-V centers and further coupled to sources and detectors of light to interact with the N-V centers.</p>
申请公布号
WO2007009037(A1)
申请公布日期
2007.01.18
申请号
WO2006US27196
申请日期
2006.07.11
申请人
APOLLO DIAMOND, INC.;LINARES, ROBERT, C.;DOERING, PATRICK, J.;DROMESHAUSER, WILLIAM;LINARES, BRYANT;GENIS, ALFRED
发明人
LINARES, ROBERT, C.;DOERING, PATRICK, J.;DROMESHAUSER, WILLIAM;LINARES, BRYANT;GENIS, ALFRED