发明名称 METHOD FOR MANUFACTURING VERTICAL STRUCTURE LIGHT EMITTING DIODE
摘要 A method for fabricating an LED with a vertical structure is provided to prevent fabricating cost and a time interval from being increased by a dicing process and a scribing process by facilitating a chip separation process by wet-etching or breaking of a second plating layer. A light emitting structure(115) in which an n-type clad layer(115a), an active layer(115b) and a p-type clad layer(115c) are sequentially disposed is formed on a growth substrate having a plurality of device regions and at least one isolation region. A trench is formed in the light emitting structure in the isolation region to separate the light emitting structure into independent device regions. A p-side electrode(106) is formed on the light emitting structure. A first plating layer pattern is formed on the p-side electrode in the device region. A second plating layer is formed on the resultant structure. The growth substrate is eliminated, and an n-side electrode(119) is formed on the n-type clad layer.
申请公布号 KR20070008759(A) 申请公布日期 2007.01.18
申请号 KR20050062508 申请日期 2005.07.12
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 HWANG, HAE YOUN;PARK, HEE SEOK;MYOUNG, SEON YOUNG;RYU, YUNG HO
分类号 H01L33/12;H01L33/02 主分类号 H01L33/12
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