METHOD FOR MANUFACTURING VERTICAL STRUCTURE LIGHT EMITTING DIODE
摘要
A method for fabricating an LED with a vertical structure is provided to prevent fabricating cost and a time interval from being increased by a dicing process and a scribing process by facilitating a chip separation process by wet-etching or breaking of a second plating layer. A light emitting structure(115) in which an n-type clad layer(115a), an active layer(115b) and a p-type clad layer(115c) are sequentially disposed is formed on a growth substrate having a plurality of device regions and at least one isolation region. A trench is formed in the light emitting structure in the isolation region to separate the light emitting structure into independent device regions. A p-side electrode(106) is formed on the light emitting structure. A first plating layer pattern is formed on the p-side electrode in the device region. A second plating layer is formed on the resultant structure. The growth substrate is eliminated, and an n-side electrode(119) is formed on the n-type clad layer.
申请公布号
KR20070008759(A)
申请公布日期
2007.01.18
申请号
KR20050062508
申请日期
2005.07.12
申请人
SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人
HWANG, HAE YOUN;PARK, HEE SEOK;MYOUNG, SEON YOUNG;RYU, YUNG HO