| 摘要 |
A semiconductor memory device including an on-die termination circuit is provided to prevent the increase of capacitance caused by connecting the on-die termination circuit to a command or address pad, by comprising a switching circuit. A semiconductor memory device(200) includes a command pad(210). An on-die termination circuit(230) reduces signal distortion due to a reflected wave. A switch(220) electrically connects or disconnects the command pad and the on-die termination circuit according to an operation mode. The switch includes an EFUSE(221). The EFUSE is insulated after a test operation is finished. The semiconductor memory device is a DRAM.
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