| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photomask that is free of generation of black defects or white defects, without causing thickening or thinning of a predetermined pattern, even if foreign matters are deposited on the photomask, and to provide an exposure method that uses the mask. <P>SOLUTION: A second light shielding pattern (SP-2) is installed adjacent to a first light-shielding pattern SP-1, corresponding to a predetermined pattern, wherein the second light-shielding pattern has dimensions equal to or larger than the additional dimension of the dimension of the first light shielding pattern with a dimension for avoiding diffracted light at one end of a light-shielding pattern in a photomask for proximity exposure and a dimension to block irradiation light caused by misalignment at positioning. A first exposure is carried out by aligning the first light shielding pattern to a predetermined position, and a second exposure is carried out by aligning the second light-shielding pattern to a predetermined position. <P>COPYRIGHT: (C)2007,JPO&INPIT |
