| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a near infrared photodetection element capable of accelerating a response speed and being easily manufactured. <P>SOLUTION: The near infrared photodetection element includes: a photoelectric converter 6 formed on one surface side of a semiconductor substrate 1 and provided with a photodiode structure of a pin photodiode, for which an i layer 62 as a drift region is interposed between a p-type region 61 and an n-type region 63, for absorbing near infrared light and generating an electron-hole pair; and a slab type photonic crystal 7 laminated on a light receiving surface of the photoelectric converter 6, and provided with a refractive index periodic structure within a two-dimensional plane parallel to the light receiving surface, for which the refractive index periodic structure is designed so as to have a resonance peak to the wavelength band of the near infrared light of an object to be detected made incident from a direction crossing the light receiving surface. <P>COPYRIGHT: (C)2007,JPO&INPIT |
