| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technology which can prevent the deterioration of manufacturing yield of semiconductor products due to pollutive impurities. <P>SOLUTION: When a semiconductor wafer is made into a thin film, a crushed layer which has a relatively thin gettering function is formed in the backside of, for example, <0.5μm, <0.3 or <0.1μm in thickness. Furthermore, diamond abrasive grains of #5000 to #20000 in particle size, for example, are retained by a vitrified bonding agent B1 containing countless air bubbles, so that the flexural strength may be secured after dividing the semiconductor wafer or making it into chips. The backside of the semiconductor wafer is ground by the diamond grinding stone which is impregnated with a compound resin B2 having viscosity in the countless air bubbles. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
