| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory device capable of allowing fine processing, and a method of manufacturing the same. SOLUTION: The manufacturing method of the ferroelectric memory device constitutes a first region 324 having surface characteristics capable of allowing a material for forming at least one member of a first electrode 32, a ferroelectric film 34 and a second electrode 36 to be preferentially deposited, and a second region 326 having surface characteristics capable of allowing the material for forming at least one member comprising a capacitor to be more hardly deposited the first region 324. A partition member 328 is formed between the plurality of first regions 324, and the second region 326 is formed in the partition member 328. The second region 326 is formed at a higher position than the first regions 324. The material is provided for forming at least one member comprising the capacitor, and the material is formed selectively in the first region 324. COPYRIGHT: (C)2007,JPO&INPIT
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