| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a superior organic thin film transistor having improved electric characteristics, especially a high charge transfer degree by increasing a work function of a metal oxide than that of an organic semiconductor material. SOLUTION: In the method for manufacturing the organic thin film transistor comprising a substrate, a gate electrode, a gate insulating film, a metal oxide source/drain electrode and an organic semiconductor layer, at least one surface of the metal oxide source/drain electrode is treated by using a self-assembled single layer film forming compound comprising a sulfonic acid group. COPYRIGHT: (C)2007,JPO&INPIT
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