| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device capable of improving ESD (electrostatic discharge) breakdown voltage efficiency per unit area, irrespective of variations in wiring resistance. SOLUTION: In this semiconductor integrated circuit device, a p-type semiconductor region 3 to be an anode of SCR has a configuration in which silicifying processing is blocked thereon, other than a contact region 3s to which a plurality of conduction paths 10a-10d to an anode electrode 9 are connected. COPYRIGHT: (C)2007,JPO&INPIT
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