| 发明名称 |
METHOD FOR AVOIDING EXPOSURE OF VOID CAUSED BY DIELECTRIC GAP-FILLING, AND FABRICATING PROCESS AND STRUCTURE OF DIELECTRIC FILM |
| 摘要 |
A method for avoiding exposure of a void caused by dielectric gap-filling is described. An etching-resistant layer is formed on only a portion of the dielectric layer over the gap covering at least the dielectric layer over the void, so that the void is not exposed in a subsequent etching process.
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| 申请公布号 |
US2007015364(A1) |
申请公布日期 |
2007.01.18 |
| 申请号 |
US20050160926 |
申请日期 |
2005.07.15 |
| 申请人 |
HSIEH SHENG-CHENG |
发明人 |
HSIEH SHENG-CHENG |
| 分类号 |
C23F1/00;H01L21/302;H01L21/461 |
主分类号 |
C23F1/00 |
| 代理机构 |
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