Nonvolatile semiconductor memory device in which write and erase threshold voltages are set at levels symmetrical about neutral threshold voltage of cell transistor

摘要

A semiconductor device includes a memory cell and driver. The memory cell has a cell transistor which has one end of a current path connected to a bit line and stores data by storing charges in a floating gate, and a selector gate transistor which has one end of a current path connected to the other end of the current path of the cell transistor and the other end of the current path connected to a source line. The driver is configured to apply, to the control gate of the cell transistor in read, a potential of the same sign as that of a potential applied to the gate of the selector gate transistor.