发明名称 |
Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects |
摘要 |
The invention comprises methods of forming a conductive contact to a source/drain region of a field effect transistor, and methods of forming local interconnects. In one implementation, a method of forming a conductive contact to a source/drain region of a field effect transistor includes providing gate dielectric material intermediate a transistor gate and a channel region of a field effect transistor. At least some of the gate dielectric material extends to be received over at least one source/drain region of the field effect transistor. The gate dielectric material received over the one source/drain region is exposed to conditions effective to change it from being electrically insulative to being electrically conductive and in conductive contact with the one source/drain region. Other aspects and implementations are contemplated.
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申请公布号 |
US2007015359(A1) |
申请公布日期 |
2007.01.18 |
申请号 |
US20060525762 |
申请日期 |
2006.09.21 |
申请人 |
BASCERI CEM;SANDHU GURTEJ S;MANNING H M |
发明人 |
BASCERI CEM;SANDHU GURTEJ S.;MANNING H. M. |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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