| 摘要 |
A new and simple purification method capable of purifying monosilane to a higher purity by removing B2H6, PH3, AsH3, H2O, etc. existing as traces of impurities in monosilane is provided. A method for purification of monosilane comprises: cleaning monosilane with cleaning water with a pH range of exceeding 7 to not more than 10; and drying the cleaned monosilane with an absorbent. The monosilane used in the purification is obtained by separating the monosilane from the product by fractional distillation after preparing a product by disproportionation of halogenated silanes. The monosilane used in the purification has a resistivity value ranging from 1,000 to 3,000 ohmÀcm. The cleaning process is performed to remove impurities selected from B2H6, PH3, AsH3 and mixtures thereof. The absorbent is selected from dried molecular sieves 3A, 4A and 5A, silica gel, alumina, and mixtures thereof. The monosilane obtained after the purification has a resistivity value of 4,500 ohmÀcm or more. |
