| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma treatment device having improved treatment stability and reproductivity particularly for forming plasma and supplying high frequency power to a testpiece stand on which a testpiece is placed to be treated. <P>SOLUTION: In the plasma treatment device, high frequency bias voltage is applied to the testpiece stand 5 in a reacting container 1 through a high frequency bias power supply 8 via a matching box 7, in this condition the testpiece 6 such as a semiconductor wafer is placed on the testpiece stand 5, and treatment is given thereto with the plasma of process gas. At starting the plasma treatment, matching high frequency power having a power value smaller than a power value in the plasma treatment is supplied from the high frequency bias power supply 8 to regulate the matching box 7 so that a value for a reflected wave detected by a power monitor part 9 is a determined value or smaller. Then, the high frequency power to be supplied from the high frequency bias power supply 8 to the testpiece stand 5 is set to be the power value in the plasma treatment before starting the plasma treatment. <P>COPYRIGHT: (C)2007,JPO&INPIT |
