SEMICONDUCTOR DEVICE AND ITS FABRICATION PROCESS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device advantageous for scaling-down, and to provide its fabrication process. SOLUTION: The semiconductor device comprises a gate insulating film 12 equipped at least with a first insulating film 21 provided in the major surface of a semiconductor device, and a first high dielectric film 22-1 principally comprising a compound of the constitutive element of the first insulating film and a predetermined metal element provided on the first insulating film and having a dielectric constant higher than that of the first insulating film, a gate electrode 13 of Cu or principally comprising Cu provided on the gate insulating film 12, and a source or a drain 15 provided in the semiconductor substrate while being isolated so that the gate electrode is inserted. COPYRIGHT: (C)2007,JPO&INPIT