发明名称 SUBSTRATE STAGE MECHANISM AND SUBSTRATE PROCESSING APPARATUS
摘要 <p>Disclosed is a substrate stage mechanism (10) on which a substrate is placed in a process chamber of a substrate processing apparatus. This substrate stage mechanism (10) also performs a function of heating the substrate. The substrate stage mechanism (10) comprises a substrate stage (11) having a base (11a) on which a substrate is placed and a heat-generating body (13) provided to the base (11a) for heating the substrate, a supporting member (12) having an upper end joined to the substrate stage (11) and an lower end fixed to the process chamber, and a heating means (17) for heating the supporting member (12). Also disclosed is a substrate processing apparatus comprising a process chamber in which a substrate is placed and a reduced pressure is maintained, the above-described substrate stage mechanism, and a processing mechanism for performing a certain process on the substrate in the process chamber.</p>
申请公布号 WO2007007744(A1) 申请公布日期 2007.01.18
申请号 WO2006JP313754 申请日期 2006.07.11
申请人 KOMATSU, TOMOHITO;TOKYO ELECTRON LIMITED 发明人 KOMATSU, TOMOHITO
分类号 C23C16/458;H01L21/205;H05B3/06;H05B3/74 主分类号 C23C16/458
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