THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME

摘要

A thin film transistor display panel and a fabrication method thereof are provided to reduce a leakage current and prevent a persistence of vision from being generated by forming a semiconductor device using a-Si:H:Cl (hydrogenated chlorinated amorphous silicon). A gate line is formed on a substrate(110). A gate insulating layer(140) is formed on the gate line. A semiconductor layer is formed on the gate insulating layer and includes 3 to 20 at% of Chlorine atoms (Cl). A data line(171) and a drain electrode(175) include an Al-containing conductive layer that is formed on the semiconductor layer and a Mo-containing conductive layer that is formed at least one of under and over the Al -containing conductive layer. A pixel electrode(191) is connected with the drain electrode.