发明名称 METHOD AND STRUCTURE FOR CHARGE DISSIPATION DURING FABRICATION OF INTEGRATED CIRCUITS AND ISOLATION THEREOF
摘要 A method, structure and design method for dissipating charge during fabrication of an integrated circuit. The structure includes: a substrate contact in a substrate; one or more wiring levels over the substrate; one or more electrically conductive charge dissipation structures extending from a top surface of an uppermost wiring level of the one or more wiring levels through each lower wiring level of the one or more wiring levels to and in electrical contact with the substrate contact; and circuit structures in the substrate and in the one or more wiring layers, the charge dissipation structures not electrically contacting any the circuit structures in any of the one or more wiring levels, the one or more charge dissipation structures dispersed between the circuit structures.
申请公布号 US2007013072(A1) 申请公布日期 2007.01.18
申请号 US20050160468 申请日期 2005.06.24
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 ELLIS-MONAGHAN JOHN J.;GAMBINO JEFFREY P.;SULLIVAN TIMOTHY D.;VOLDMAN STEVEN H.
分类号 H01L23/52 主分类号 H01L23/52
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