发明名称 |
N-type carbon nanotube field effect transistor and method of fabricating the same |
摘要 |
Provided are an n-type carbon nanotube field effect transistor (CNT FET) and a method of fabricating the n-type CNT FET. The n-type CNT FET may include a substrate; electrodes formed on the substrate and separated from each other; a CNT forrmed on the substrate and electrically connected to the electrodes; a gate oxide layer formed on the CNT; and a gate electrode formed on the gate oxide layer, wherein the gate oxide layer contains electron donor atoms which donate electrons to the CNT such that the CNT may be n-doped by the electron donor atoms.
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申请公布号 |
US2007012961(A1) |
申请公布日期 |
2007.01.18 |
申请号 |
US20050192107 |
申请日期 |
2005.07.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BAE EUN-JU;MIN YO-SEP;PARK WAN-JUN |
分类号 |
H01L29/76;H01L29/94;H01L31/00 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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