| 摘要 |
A semiconductor device includes: a transmission switch having multiple first FETs connected in series between a first terminal connected to a transmission part and a second terminal connected to a common connection portion, gates of the multiple first FETs being connected to transmission drive circuits; a reception switch having multiple second FETs connected in series between a third terminal connected to a reception part and a fourth terminal connected to the common connection portion, gates of the multiple second FETs being connected to reception drive circuits; and a booster circuit generates a boosted voltage having a positive or negative polarity on the basis of a given power supply voltage. When the transmission switch is in a conducting state, the boosted voltage is applied to gates of the multiple first FETs in order to switch the transmission switch to a non-conducting state.
|
