发明名称 |
APPARATUS AND METHOD FOR PROGRAMMING AN ARRAY OF NONVOLATILE MEMORY CELLS INCLUDING SWITCHABLE RESISTOR MEMORY ELEMENTS |
摘要 |
<p>A non-volatile memory cell includes a switchable resistor memory element in series with a switch device. An array of such cells may be programmed using only positive voltages. A method for programming such cells also supports a direct write of both 0 and 1 data states without requirement of a block erase operation, and is scalable for use with relatively low voltage power supplies. A method for reading such cells reduces read disturb of a selected memory cell by impressing a read bias voltage having a polarity opposite that of a set voltage employed to change the switchable resistor memory element to a low resistance state. Such programming and read methods are well suited for use in a three-dimensional memory array formed on multiple levels above a substrate, particularly those having extremely compact array line drivers on very tight layout pitch.</p> |
申请公布号 |
WO2007008701(A2) |
申请公布日期 |
2007.01.18 |
申请号 |
WO2006US26581 |
申请日期 |
2006.07.10 |
申请人 |
SANDISK 3D LLC;SCHEUERLEIN, ROY, E. |
发明人 |
SCHEUERLEIN, ROY, E. |
分类号 |
G11C7/10 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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