| 摘要 |
A thin film transistor substrate and a manufacturing method thereof are provided to prevent over- etching of a data line by etching the data line through one process. A gate insulating layer(30), an intrinsic amorphous silicon layer, a doped amorphous silicon layer, and a data conductive layer are sequentially stacked on a substrate including a gate line(22). The data conductive layer, and the doped amorphous silicon layer are etched using a first resist pattern defining a data line(62) as an etching mask to form the data line and resistant contact layers(52,55,56,57). The intrinsic amorphous silicon layer is etched using a second photoresist pattern defining a semiconductor layer(42,44) as an etching mask to form the semiconductor layer. |
