| 摘要 |
An apparatus for fabricating a semiconductor is provided to maintain uniform RF VPP while sufficiently enlarging a cap between a depo shield and an end part of the outer circumference of a baffle plate by reducing the outer diameter of the depo shield. A flange(31) which is extended by a predetermined width to the inside is formed of a flat ring type on the inner circumferential surface of a depo shield(30). The flange overlaps a part of a baffle shield in a vertical line. The flange is located in a position higher than the most increased position of a baffle plate(60), having an inner diameter smaller than the outer diameter of the baffle plate and greater than the inner diameter of the baffle plate.
|
