| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing an exposure mask by which a resist pattern formed by a lithographic process can be finely processed with preferable pattern shape accuracy, and to provide a method for manufacturing a semiconductor device. <P>SOLUTION: A test mask having a plurality of test patterns is produced (S1, S5) by changing shapes and layouts according to the shape and layout of a design pattern. A plurality of test resist patterns are formed (S2, S6) by transferring the test patterns by a lithographic process including pattern exposure using the test mask. The test resist patterns are finely processed (S3, S7). A pattern most approximate to the design pattern is selected from the finely processed test resist patterns, and the test pattern used for the formation of the selected pattern is adopted as a correction pattern (S4, S8). Then an exposure mask having the correction pattern is produced (S9). <P>COPYRIGHT: (C)2007,JPO&INPIT |
