| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device having a depressed gate suppressing a short channel effect, the deterioration of a parasitic series resistance, and a spiking phonomenon. <P>SOLUTION: The method for manufacturing the semiconductor device includes steps of: forming a trench 34 in a gate formation region of a semiconductor substrate 31; forming a spacer 35a on both side walls of the trench 34; forming a first conductive dopant doped region 36 in a source formation region of the substrate 31; forming a first LDD region 37a where a second conductive dopant is doped in a drain formation region of the substrate 31; forming a gate insulating film 39 and a gate conductive film 40; forming a gate 41 by etching; forming a second LDD region 37b in the surface portions of the substrate on both sides of the gate 41; forming a gate spacer 43 on both side walls of the gate 41; and forming a source region 44a and a drain region 44b of asymmetric structure in the surface portions of both sides of the gate 41. <P>COPYRIGHT: (C)2007,JPO&INPIT |
