| 摘要 |
An improved electrostatic discharge (ESD) protection structure that is suitable for use in a large-scale CMOS circuit fabrication technology is disclosed. When surge energy enters the first conductor during an ESD event, the surge current is conducted through the first contacts of the first MOS transistors, the second contacts of the first MOS transistors, the fourth conductor, and the third contacts of the second transistors. As each third contact is paired with each second contact, the surge current is conducted from a second contact to the paired third contact. Then, the surge current is conducted through the third contacts, fourth contacts, and the second conductor. In this operation, electric fields are generated in the direction of the first contacts, the second contacts, the fourth conductor, the third contacts, and the fourth contacts. Thus, the surge current is not conducted by way of the fifth conductor from a second contact to the other second contacts against the electric fields that are generated. Therefore, the surge current is only conducted from a second contact and the paired third contact. In other words, the surge current is dispersed, and is not conducted to a specific second contact.
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