发明名称 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 A semiconductor memory device includes an insulation layer disposed in a fuse region of a substrate, a fuse including a conductive pattern disposed on the insulation layer and a metal pattern disposed in physical contact with the conductive pattern, the conductive pattern composed of a material that thermally explodes when it absorbs a laser beam.
申请公布号 US2007013025(A1) 申请公布日期 2007.01.18
申请号 US20060457122 申请日期 2006.07.12
申请人 MUN CHEAR-YEON 发明人 MUN CHEAR-YEON
分类号 H01L29/00 主分类号 H01L29/00
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