| 摘要 |
A method for making a semiconductor device may include forming a superlattice layer including a plurality of stacked groups of layers, and forming at least one pair of spaced apart stress regions on opposing sides of the superlattice layer to induce a strain therein. Each group of layers of the strained superlattice layer may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
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