INDUCTIVELY COUPLED PLASMA APPARATUS FOR LARGE AREA PROCESSING USING DUAL FREQUENCY

摘要

An ultra-large area plasma generating apparatus using a dual frequency is provided to maximize improvement of plasma uniformity by using input power of dual frequency. A substrate for performing an etch process or a deposition process is mounted on a stage(1200). A reaction chamber(1100) has a plasma process region, capable of being separated from the stage. The reaction chamber is covered with a cover. The reaction chamber is coupled to the cover by an assemble frame. First and second antenna sources are disposed in the plasma process region, constructed in parallel with a plurality of antennal assemble body of which one side is connected to power and the other side is grounded. A plurality of magnetic assemble bodies(1500) are disposed at both sides of each antenna assemble body. The first antenna source includes m antenna assembly bodies(1400) to which the same power is applied. The second antennal source includes m-1 antennal assemble bodies to which the same power is applied. Each antenna assemble body of the first antenna source and each antenna assemble body of the second antennal source are alternately disposed. Input power applied to the first antenna source and input power applied to the second antenna source are simultaneously applied, having different dimensions. The first and the second antenna sources can be two antennal sources made of a comb type in which a plurality of antenna assemble bodies are interconnected in parallel.