摘要 |
The present invention generally relates to a high resistivity CZ silicon wafer, or a high resistivity silicon structure derived therefrom, and a process for the preparation thereof. In particular, the high resistivity silicon structure comprises a large diameter CZ silicon wafer as the substrate thereof, wherein the resistivity of the substrate wafer is decoupled from the concentration of acceptor atoms (e.g., boron) therein, the resistivity of the substrate being substantially greater than the resistivity as calculated based on the concentration of said acceptor atoms therein. |
申请人 |
MEMC ELECTRONIC MATERIALS, INC.;FALSTER, ROBERT, J.;VORONKOV, VLADIMIR, V.;VORONKOVA, GALINA, I.;BATUNINA, ANNA, V. |
发明人 |
FALSTER, ROBERT, J.;VORONKOV, VLADIMIR, V.;VORONKOVA, GALINA, I.;BATUNINA, ANNA, V. |