发明名称 |
ELECTRODE STRUCTURE, SEMICONDUCTOR DEVICE AND METHODS FOR MANUFACTURING THOSE |
摘要 |
<p>A first layer containing Ti as a constituent element, a second layer containing Nb as a constituent element and a third layer containing Au as a constituent element are formed on a GaN substrate (11). Then, the GaN substrate (11) and the first to third layers are heat-treated at a temperature not less than 700°C and not more than 1300°C. Consequently, a metal oxide of Ti is distributed from the interface between the GaN substrate (11) and an electrode (14) to the inside of the electrode (14). Further, a metal nitride of Nb is formed inside the GaN substrate (11), and the metal nitride of Nb is distributed from the inside of the electrode (14) to the inside of the GaN substrate (11).</p> |
申请公布号 |
WO2007007634(A1) |
申请公布日期 |
2007.01.18 |
申请号 |
WO2006JP313482 |
申请日期 |
2006.07.06 |
申请人 |
NEC CORPORATION;SASAKI, TATSUYA;SHIBA, KAZUHIRO;KOUMOTO, SHIGERU;SUMINO, MASAYOSHI |
发明人 |
SASAKI, TATSUYA;SHIBA, KAZUHIRO;KOUMOTO, SHIGERU;SUMINO, MASAYOSHI |
分类号 |
H01L21/28;H01L33/00;H01L33/32;H01L33/40;H01S5/042;H01S5/323 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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