| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a CMOS image sensor which can improve light efficiency of blue light by reducing the depth of a p-type impurity region to be introduced to isolate a photodiode and the surface of a silicon substrate, reduce a determination defect which may occur during an ion implantation process, and improve light characteristics by forming a high-density p-type impurity region. <P>SOLUTION: This method includes a step of performing an ion implantation process onto a photodiode forming region in a first conductivity type semiconductor layer to form a second conductivity type first impurity region 27; and a step of performing an annealing process in a gas atmosphere (B<SB>2</SB>H<SB>6</SB>) including first conductivity type impurity atoms to form a first conductivity type second impurity region 30 doped by diffusing first conductivity type impurity atoms (boron) on the surface of the semiconductor layer in the first impurity region. <P>COPYRIGHT: (C)2007,JPO&INPIT |
