| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce an operation current during a write operation in a semiconductor storage device having a cross point type memory cell array provided with memory cells composed of variable resistive elements for storing information by the change of electric resistance. <P>SOLUTION: A plurality of main data lines GDL0-GDL7 for supplying a prescribed data line voltage corresponding to each of respective data lines DL0-DL7 of respective memory cell arrays BK0-BK3 arrayed at least in a row direction are stretched in the row direction. In the respective memory cell arrays BK0-BK3, the respective main data lines GDL0-GDL7 are connected with the corresponding data lines DL0-DL7 through respective data line selection transistors TD0k-TD7k, and the number of the data lines DL0-DL7 of the respective memory cell arrays BK0-BK3 is equal to the maximum number of the memory cells to be a write object simultaneously in one write operation. <P>COPYRIGHT: (C)2007,JPO&INPIT |
