发明名称 METHOD OF HEATING SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a method of heating a substrate by which the uniformity of a film between substrates can be improved during heating by carrying in a plurality of substrates one by one into a processing chamber. SOLUTION: The temperature of substrates to be carried in one by one into a processing chamber is monitored (1), the quantity of heat storage to the processing chamber is estimated on the basis of the aging of the substrates (2), and the heating time of the substrate in the processing chamber, especially film formation times (B1, B2, B3, etc.) are controlled on the basis of the estimated quantity of the heat storage so that the quantity of heat to be supplied per substrate may be constant (3). Thus, a change can be prevented in film thickness due to heat storage in the processing chamber. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007012827(A) 申请公布日期 2007.01.18
申请号 JP20050190814 申请日期 2005.06.30
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 NISHIDA KO;MATSUZAWA YUTAKA;TAKAMORI MASUNORI
分类号 H01L21/316;C23C16/46;H01L21/26;H01L21/31 主分类号 H01L21/316
代理机构 代理人
主权项
地址