| 摘要 |
A lower IGBT and an upper IGBT are excellently and firmly bonded by solder, the lower IGBT and a wire are firmly connected, and a highly reliable semiconductor device is formed. The semiconductor device is provided with a lower electrode layer (5) firmly bonded to the lower IGBT (1); an upper electrode layer (6) firmly bonded to the lower electrode layer (5); the upper IGBT (2) firmly bonded to the upper electrode layer (6); and the solder (7) for connecting the upper electrode layer (6) and the upper IGBT (2). The lower electrode layer (5) and the upper electrode layer (6) are formed of different materials, a wire connecting region (15) partially exposed to the external from a notched section (36) provided on the upper electrode layer (6) is arranged on an upper plane (5a) of the lower electrode layer (5), and a wire (8) is connected to the wire connecting region (15). The upper electrode layer (6) is formed of a material having excellent solderability, and the lower electrode layer (5) is formed of a material having high connecting strength with the wire (8). |
