发明名称 REGISTER READ FOR VOLATILE MEMORY
摘要 Data not stored in the DRAM array (104) of a SDRAM module (100) is read from the SDRAM module in a synchronous data transfer. The data transfer, referred to as register read command/operation, resembles a read command/operation directed to data stored in the DRAM array in timing and operation. The register read command is distinguished by a unique encoding of the SDRAM control signals and bank address bits. In one embodiment, the register read command comprises the same control signal states as a MRS or EMRS command, with the bank address set to a unique value, such as 2'b10. The register read command may read only a single datum, or may utilize the address bus to address a plurality of data not stored in the DRAM array. The register read operation may be a burst read, and the burst length may be defined in a variety of ways .
申请公布号 WO2006089313(A3) 申请公布日期 2007.01.18
申请号 WO2006US06995 申请日期 2006.02.03
申请人 QUALCOMM INCORPORATED;WALKER, ROBERT, MICHAEL 发明人 WALKER, ROBERT, MICHAEL
分类号 G11C7/10;G11C5/00;G11C11/406 主分类号 G11C7/10
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