发明名称 |
INTEGRATED CIRCUIT EMBODYING A NON-VOLATILE MEMORY CELL |
摘要 |
<p>An integrated circuit is provided including at least one memory cell. Such memory cell, in turn, includes a transistor and a capacitor. The transistor includes a source, a drain, and a gate. Further, the capacitor includes a well and a gate. The gate of the transistor remains in communication with the gate of the capacitor. In various other embodiments, the memory cell includes a transistor and a capacitor including wells of differing types (e.g. P-type, N-type). In such embodiments, the well of the transistor abuts the well of the capacitor. In still further embodiments, for a more compact design, a diffusion region of the transistor is situated less than 2.5µm from a diffusion region of the capacitor.</p> |
申请公布号 |
WO2007008344(A1) |
申请公布日期 |
2007.01.18 |
申请号 |
WO2006US23705 |
申请日期 |
2006.06.19 |
申请人 |
SANDISK 3D LLC;BANDYOPADHYAY, ABHIJIT;PETTI, CHRISTOPHER J.;KUMAR, TANMAY |
发明人 |
BANDYOPADHYAY, ABHIJIT;PETTI, CHRISTOPHER J.;KUMAR, TANMAY |
分类号 |
H01L27/115;H01L21/8247;H01L29/788 |
主分类号 |
H01L27/115 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|