发明名称 MULTILAYER WIRING STRUCTURE AND METHOD FOR FORMING SAME
摘要 <p>In a multilayer wiring structure, an upper layer wiring is formed in an interlayer insulating film on a lower wiring composed of copper, and the lower layer wiring composed of copper and the upper wiring are connected through a via formed in the interlayer insulating film. A layer in contact with the lower wiring in the interlayer insulating film is composed of a layer having an aromatic compound, which includes a nitrogen atom having a lone pair in an aromatic ring, as a main component.</p>
申请公布号 WO2007007447(A1) 申请公布日期 2007.01.18
申请号 WO2006JP306637 申请日期 2006.03.30
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;AOI, NOBUO 发明人 AOI, NOBUO
分类号 H01L21/768;H01L21/312;H01L23/522 主分类号 H01L21/768
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