发明名称 |
MULTILAYER WIRING STRUCTURE AND METHOD FOR FORMING SAME |
摘要 |
<p>In a multilayer wiring structure, an upper layer wiring is formed in an interlayer insulating film on a lower wiring composed of copper, and the lower layer wiring composed of copper and the upper wiring are connected through a via formed in the interlayer insulating film. A layer in contact with the lower wiring in the interlayer insulating film is composed of a layer having an aromatic compound, which includes a nitrogen atom having a lone pair in an aromatic ring, as a main component.</p> |
申请公布号 |
WO2007007447(A1) |
申请公布日期 |
2007.01.18 |
申请号 |
WO2006JP306637 |
申请日期 |
2006.03.30 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;AOI, NOBUO |
发明人 |
AOI, NOBUO |
分类号 |
H01L21/768;H01L21/312;H01L23/522 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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